| Anzahl | Preis |
|---|---|
| 2+ | 2.18 EUR |
| 10+ | 1.97 EUR |
| 100+ | 1.53 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1 EUR |
| 2500+ | 0.93 EUR |
| 10000+ | 0.85 EUR |
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Technische Details TK58A06N1,S4X Toshiba
Description: MOSFET N-CH 60V 58A TO220SIS, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 4V @ 500µA, Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 29A, 10V, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote TK58A06N1,S4X nach Preis ab 1.96 EUR bis 2.18 EUR
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TK58A06N1,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 60V 58A TO220SISInput Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 4V @ 500µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 29A, 10V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 46 Stücke: Lieferzeit 10-14 Tag (e) |
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