auf Bestellung 300 Stücke:
Lieferzeit 415-429 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 3.48 EUR |
| 17+ | 3.12 EUR |
| 100+ | 2.42 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.42 EUR |
| 2500+ | 1.39 EUR |
Produktrezensionen
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Technische Details TK58E06N1,S1X Toshiba
Description: MOSFET N-CH 60V 58A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Ta), Rds On (Max) @ Id, Vgs: 5.4mOhm @ 29A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 500µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V.
Weitere Produktangebote TK58E06N1,S1X
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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TK58E06N1,S1X | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 60V 105A 3-Pin(3+Tab) TO-220 Magazine |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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TK58E06N1,S1X | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 105A 3-Pin(3+Tab) TO-220 Magazine |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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TK58E06N1,S1X | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 105A 3-Pin(3+Tab) TO-220 Magazine |
Produkt ist nicht verfügbar |
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TK58E06N1,S1X | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 105A 3-Pin(3+Tab) TO-220 Magazine |
Produkt ist nicht verfügbar |
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| TK58E06N1,S1X | Hersteller : Toshiba |
Trans MOSFET N-CH Si 60V 105A 3-Pin(3+Tab) TO-220 Magazine |
Produkt ist nicht verfügbar |
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TK58E06N1,S1X | Hersteller : TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 58A; 110W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 58A Power dissipation: 110W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TK58E06N1,S1X | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 58A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Ta) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 29A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 500µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 30 V |
Produkt ist nicht verfügbar |
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TK58E06N1,S1X | Hersteller : TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 58A; 110W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 58A Power dissipation: 110W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 4.4mΩ Mounting: THT Gate charge: 46nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |