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TK5A65DA(STA4,Q,M)

TK5A65DA(STA4,Q,M) Toshiba Semiconductor and Storage

TK5A65DA_datasheet_en_20140105.pdf?did=6132&prodName=TK5A65DA Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 4.5A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 1.67Ohm @ 2.3A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
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Technische Details TK5A65DA(STA4,Q,M) Toshiba Semiconductor and Storage

Description: MOSFET N-CH 650V 4.5A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 1.67Ohm @ 2.3A, 10V, Power Dissipation (Max): 35W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 1mA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V.

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TK5A65DA(STA4,Q,M) TK5A65DA(STA4,Q,M) Hersteller : Toshiba TK5A65DA_datasheet_en_20140105-1151055.pdf MOSFET N-Ch MOS 4.5A 650V 35W 700pF 1.67 Ohm
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