| Anzahl | Preis |
|---|---|
| 2+ | 2.2 EUR |
| 10+ | 1.63 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 0.9 EUR |
| 5000+ | 0.88 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK5A80E,S4X Toshiba
Description: PB-F POWER MOSFET TRANSISTOR TO-, Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220SIS, Vgs(th) (Max) @ Id: 4V @ 500µA, Power Dissipation (Max): 40W (Tc), Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote TK5A80E,S4X
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
TK5A80E,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: PB-F POWER MOSFET TRANSISTOR TO-Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220SIS Vgs(th) (Max) @ Id: 4V @ 500µA Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 2.4Ohm @ 2.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |