Weitere Produktangebote TK5P65W,RQ nach Preis ab 1.05 EUR bis 3.97 EUR
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TK5P65W,RQ | Toshiba |
 MOSFETs Pb-F POWER MOSFET TRANSISTOR DPAK(OS) PD=60W F=1MHZ |
auf Bestellung 1670 Stücke: Lieferzeit 10-14 Tag (e) |
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TK5P65W,RQ | Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR DPA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 1.22Ohm @ 2.6A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 170µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V |
auf Bestellung 1957 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK5P65W,RQ |
|
Hersteller: Toshiba
MOSFETs Pb-F POWER MOSFET TRANSISTOR DPAK(OS) PD=60W F=1MHZ
MOSFETs Pb-F POWER MOSFET TRANSISTOR DPAK(OS) PD=60W F=1MHZ
auf Bestellung 1670 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.53 EUR |
| 10+ | 1.99 EUR |
| 25+ | 1.87 EUR |
| 100+ | 1.4 EUR |
| 250+ | 1.39 EUR |
| 500+ | 1.13 EUR |
| 1000+ | 1.05 EUR |
| TK5P65W,RQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 2.6A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 2.6A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
auf Bestellung 1957 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.97 EUR |
| 10+ | 2.56 EUR |
| 100+ | 1.74 EUR |
| 500+ | 1.38 EUR |
| 1000+ | 1.33 EUR |