auf Bestellung 259 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 3.35 EUR |
| 18+ | 3.04 EUR |
| 100+ | 2.41 EUR |
| 500+ | 2 EUR |
| 1000+ | 1.53 EUR |
| 5000+ | 1.46 EUR |
| 10000+ | 1.45 EUR |
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Technische Details TK5R1A08QM,S4X Toshiba
Description: UMOS10 TO-220SIS 80V 5.1MOHM, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 35A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 700µA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V.
Weitere Produktangebote TK5R1A08QM,S4X nach Preis ab 3.7 EUR bis 4.13 EUR
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TK5R1A08QM,S4X | Hersteller : Toshiba Semiconductor and Storage |
Description: UMOS10 TO-220SIS 80V 5.1MOHM Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 35A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 700µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V |
auf Bestellung 66 Stücke: Lieferzeit 21-28 Tag (e) |
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TK5R1A08QM,S4X | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 80V 71A 3-Pin(3+Tab) TO-220SIS Tube |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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TK5R1A08QM,S4X | Hersteller : Toshiba |
Trans MOSFET N-CH Si 80V 71A 3-Pin(3+Tab) TO-220SIS Tube |
Produkt ist nicht verfügbar |