TK5R1P08QM,RQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 DPAK 80V 5.1MOHM
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Power Dissipation (Max): 104W (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.09 EUR |
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Technische Details TK5R1P08QM,RQ Toshiba Semiconductor and Storage
Description: UMOS10 DPAK 80V 5.1MOHM, Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 3.5V @ 700µA, Power Dissipation (Max): 104W (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 42A, 10V, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote TK5R1P08QM,RQ nach Preis ab 1.14 EUR bis 3.24 EUR
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TK5R1P08QM,RQ | Hersteller : Toshiba Semiconductor and Storage |
Description: UMOS10 DPAK 80V 5.1MOHM Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3.5V @ 700µA Power Dissipation (Max): 104W (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 42A, 10V Current - Continuous Drain (Id) @ 25°C: 84A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 6841 Stücke: Lieferzeit 10-14 Tag (e) |
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TK5R1P08QM,RQ | Hersteller : Toshiba |
MOSFETs UMOS10 DPAK 80V 5.1mohm |
auf Bestellung 25314 Stücke: Lieferzeit 10-14 Tag (e) |
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