Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TK5R1P08QM,RQ

TK5R1P08QM,RQ Toshiba Semiconductor and Storage

Name: TK5R1P08QM,RQ
Brand: Toshiba Semiconductor and Storage
SKU: 13656074-3
Price: 1.61 EUR
Availability: InStock

TK5R1P08QM_datasheet_en_20210119.pdf?did=70474&prodName=TK5R1P08QM

Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 DPAK 80V 5.1MOHM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 42A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V

auf Bestellung 2500 Stücke:

Lieferzeit 21-28 Tag (e)

Anzahl	Preis ohne MwSt
2500+	1.61 EUR

Mindestbestellmenge: 2500

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Technische Details TK5R1P08QM,RQ Toshiba Semiconductor and Storage

Description: UMOS10 DPAK 80V 5.1MOHM, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 84A (Tc), Rds On (Max) @ Id, Vgs: 5.1mOhm @ 42A, 10V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 700µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V.

Weitere Produktangebote TK5R1P08QM,RQ nach Preis ab 1.33 EUR bis 3.8 EUR

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TK5R1P08QM,RQ

Hersteller : Toshiba

TK5R1P08QM_datasheet_en_20210119-2486430.pdf

MOSFET UMOS10 DPAK 80V 5.1mohm

auf Bestellung 31518 Stücke:

Lieferzeit 14-28 Tag (e)

Anzahl	Preis ohne MwSt
16+	3.38 EUR
19+	2.78 EUR
100+	2.16 EUR
500+	1.83 EUR
1000+	1.49 EUR
2500+	1.4 EUR
5000+	1.33 EUR

Mindestbestellmenge: 16

TK5R1P08QM,RQ

Hersteller : Toshiba Semiconductor and Storage

Description: UMOS10 DPAK 80V 5.1MOHM
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 42A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 700µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V

auf Bestellung 6841 Stücke:

Lieferzeit 21-28 Tag (e)