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TK60S10N1L,LXHQ

TK60S10N1L,LXHQ Toshiba

TK60S10N1L_datasheet_en_20200624-1915215.pdf Hersteller: Toshiba
MOSFETs PD=180W F=1MHZ AEC-Q101
auf Bestellung 7590 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.43 EUR
10+2.01 EUR
25+1.87 EUR
100+1.6 EUR
250+1.5 EUR
500+1.28 EUR
1000+1.15 EUR
Mindestbestellmenge: 2
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Technische Details TK60S10N1L,LXHQ Toshiba

Description: MOSFET N-CH 100V 60A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 500µA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote TK60S10N1L,LXHQ nach Preis ab 1.17 EUR bis 2.53 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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TK60S10N1L,LXHQ TK60S10N1L,LXHQ Hersteller : Toshiba Semiconductor and Storage TK60S10N1L_datasheet_en_20200624.pdf?did=58173&prodName=TK60S10N1L Description: MOSFET N-CH 100V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3704 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.53 EUR
10+2.11 EUR
100+1.49 EUR
500+1.31 EUR
1000+1.17 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
TK60S10N1L,LXHQ TK60S10N1L,LXHQ Hersteller : Toshiba Semiconductor and Storage TK60S10N1L_datasheet_en_20200624.pdf?did=58173&prodName=TK60S10N1L Description: MOSFET N-CH 100V 60A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 6.11mOhm @ 30A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4320 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
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