| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.66 EUR |
| 10+ | 18.55 EUR |
| 120+ | 16.21 EUR |
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Technische Details TK62N60W5,S1VF Toshiba
Description: PB-F POWER MOSFET TRANSISTOR TO-, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 30.9A, 10V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 3.1mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V.
Weitere Produktangebote TK62N60W5,S1VF nach Preis ab 26.73 EUR bis 26.73 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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TK62N60W5,S1VF | Toshiba Semiconductor and Storage |
 Description: PB-F POWER MOSFET TRANSISTOR TO-Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 30.9A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V |
auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK62N60W5,S1VF |
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Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30.9A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Description: PB-F POWER MOSFET TRANSISTOR TO-
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30.9A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.73 EUR |