| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.66 EUR |
| 10+ | 18.55 EUR |
| 120+ | 16.21 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK62N60W5,S1VF Toshiba
Description: PB-F POWER MOSFET TRANSISTOR TO-, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247, Vgs(th) (Max) @ Id: 4.5V @ 3.1mA, Power Dissipation (Max): 400W (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 30.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote TK62N60W5,S1VF nach Preis ab 26.73 EUR bis 26.73 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
 |
TK62N60W5,S1VF | Toshiba Semiconductor and Storage |
 Description: PB-F POWER MOSFET TRANSISTOR TO-Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 Vgs(th) (Max) @ Id: 4.5V @ 3.1mA Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 30.9A, 10V Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TK62N60W5,S1VF |
|
Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR TO-
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4.5V @ 3.1mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: PB-F POWER MOSFET TRANSISTOR TO-
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 4.5V @ 3.1mA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 30.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.73 EUR |