auf Bestellung 80 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 26.47 EUR |
10+ | 23.32 EUR |
30+ | 22.7 EUR |
60+ | 21.42 EUR |
120+ | 20.12 EUR |
270+ | 19.53 EUR |
510+ | 18.51 EUR |
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Technische Details TK62N60W5,S1VF Toshiba
Description: PB-F POWER MOSFET TRANSISTOR TO-, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 30.9A, 10V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 3.1mA, Supplier Device Package: TO-247, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V.
Weitere Produktangebote TK62N60W5,S1VF nach Preis ab 18.41 EUR bis 20.03 EUR
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TK62N60W5,S1VF | Hersteller : Toshiba Semiconductor and Storage |
Description: PB-F POWER MOSFET TRANSISTOR TO- Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 30.9A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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TK62N60W5,S1VF | Hersteller : Toshiba | Trans MOSFET N-CH Si 600V 61.8A 3-Pin(3+Tab) TO-247 Magazine |
Produkt ist nicht verfügbar |