Weitere Produktangebote TK62N60X,S1F nach Preis ab 11.41 EUR bis 26.49 EUR
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TK62N60X,S1F | Toshiba |
 MOSFET DTMOSIV-High Speed 600V 40mOhmmax |
auf Bestellung 60 Stücke: Lieferzeit 178-182 Tag (e) |
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TK62N60X,S1F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 61.8A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3.1mA Supplier Device Package: TO-247 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V |
auf Bestellung 313 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK62N60X,S1F |
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Hersteller: Toshiba
MOSFET DTMOSIV-High Speed 600V 40mOhmmax
MOSFET DTMOSIV-High Speed 600V 40mOhmmax
auf Bestellung 60 Stücke:
Lieferzeit 178-182 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.09 EUR |
| 10+ | 18.1 EUR |
| 30+ | 15.05 EUR |
| 270+ | 13.28 EUR |
| 510+ | 11.96 EUR |
| 2520+ | 11.41 EUR |
| TK62N60X,S1F |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 61.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Description: MOSFET N-CH 600V 61.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
auf Bestellung 313 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.49 EUR |
| 30+ | 16.12 EUR |
| 120+ | 13.84 EUR |