TK62N60X Toshiba

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 61.8A; Idm: 247A; 400W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 61.8A, Pulsed drain current: 247A, Power dissipation: 400W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 33mΩ, Mounting: THT, Gate charge: 135nC, Kind of package: tube, Kind of channel: enhancement.