| Anzahl | Privatkunde |
|---|---|
| 1+ | 34.37 EUR |
| 10+ | 31.61 EUR |
| 100+ | 25.79 EUR |
| 500+ | 23.26 EUR |
| 1000+ | 22.32 EUR |
| 2500+ | 21.82 EUR |
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Technische Details TK62Z60X,S1F Toshiba
Description: X35 PB-F POWER MOSFET TRANSISTOR, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 3.1mA, Supplier Device Package: TO-247-4L(T), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V.
Weitere Produktangebote TK62Z60X,S1F nach Preis ab 33.62 EUR bis 36.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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TK62Z60X,S1F | Toshiba Semiconductor and Storage |
 Description: X35 PB-F POWER MOSFET TRANSISTORPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3.1mA Supplier Device Package: TO-247-4L(T) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK62Z60X,S1F |
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Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.1mA
Supplier Device Package: TO-247-4L(T)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61.8A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 21A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 3.1mA
Supplier Device Package: TO-247-4L(T)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 300 V
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 36.57 EUR |
| 10+ | 33.62 EUR |