| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.95 EUR |
| 10+ | 2.98 EUR |
| 100+ | 2.87 EUR |
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Technische Details TK65E10N1,S1X Toshiba
Description: MOSFET N CH 100V 148A TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 148A (Ta), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 32.5A, 10V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V.
Weitere Produktangebote TK65E10N1,S1X nach Preis ab 2.71 EUR bis 6.06 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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TK65E10N1,S1X | Toshiba Semiconductor and Storage |
 Description: MOSFET N CH 100V 148A TO220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 148A (Ta) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 32.5A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V |
auf Bestellung 180 Stücke: Lieferzeit 10-14 Tag (e) |
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TK65E10N1,S1X | Toshiba |
Trans MOSFET N-CH Si 100V 148A 3-Pin(3+Tab) TO-220 Magazine |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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TK65E10N1,S1X | Toshiba |
Trans MOSFET N-CH Si 100V 148A 3-Pin(3+Tab) TO-220 Magazine |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TK65E10N1,S1X |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 100V 148A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 148A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 32.5A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
Description: MOSFET N CH 100V 148A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 148A (Ta)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 32.5A, 10V
Power Dissipation (Max): 192W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
auf Bestellung 180 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.06 EUR |
| 10+ | 3.92 EUR |
| 50+ | 3.01 EUR |
| 100+ | 2.71 EUR |
| TK65E10N1,S1X |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 100V 148A 3-Pin(3+Tab) TO-220 Magazine
Trans MOSFET N-CH Si 100V 148A 3-Pin(3+Tab) TO-220 Magazine
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
| TK65E10N1,S1X |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 100V 148A 3-Pin(3+Tab) TO-220 Magazine
Trans MOSFET N-CH Si 100V 148A 3-Pin(3+Tab) TO-220 Magazine
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)