Technische Details TK65S04K3L(T6L1,NQ Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 88W; DPAK, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 65A, Power dissipation: 88W, Case: DPAK, Gate-source voltage: ±20V, On-state resistance: 4.5mΩ, Mounting: SMD, Gate charge: 63nC, Kind of package: reel; tape, Kind of channel: enhanced, Features of semiconductor devices: ESD protected gate, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote TK65S04K3L(T6L1,NQ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TK65S04K3L(T6L1,NQ | Hersteller : TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 65A; 88W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 65A Power dissipation: 88W Case: DPAK Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TK65S04K3L(T6L1,NQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 40V 65A DPAK-3 |
Produkt ist nicht verfügbar |
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TK65S04K3L(T6L1,NQ | Hersteller : Toshiba |
MOSFET N-Ch MOS 65A 40V 88W 2800pF 0.0045 |
Produkt ist nicht verfügbar |
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TK65S04K3L(T6L1,NQ | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 65A; 88W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 65A Power dissipation: 88W Case: DPAK Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |