Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TK65S04N1L,LQ
TK65S04N1L,LQ

TK65S04N1L,LQ Toshiba Semiconductor and Storage

TK65S04N1L_datasheet_en_20200624.pdf?did=14572&prodName=TK65S04N1L
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 65A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+1.65 EUR
6000+1.59 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details TK65S04N1L,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 40V 65A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Ta), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V, Power Dissipation (Max): 107W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 300µA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V.

Weitere Produktangebote TK65S04N1L,LQ nach Preis ab 1.67 EUR bis 5.37 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
TK65S04N1L,LQ TK65S04N1L,LQ Toshiba Semiconductor and Storage TK65S04N1L_datasheet_en_20200624.pdf?did=14572&prodName=TK65S04N1L Description: MOSFET N-CH 40V 65A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
auf Bestellung 7976 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.69 EUR
10+3.06 EUR
100+2.43 EUR
500+2.06 EUR
1000+1.75 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK65S04N1L,LQ TK65S04N1L,LQ Toshiba TK65S04N1L_datasheet_en_20200624-1858434.pdf MOSFETs UMOSVIII 40V 4.3m max(VGS=10V) DPAK
auf Bestellung 1540 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.37 EUR
10+3.45 EUR
100+2.4 EUR
500+1.93 EUR
1000+1.87 EUR
2000+1.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TK65S04N1L,LQ TK65S04N1L_datasheet_en_20200624.pdf?did=14572&prodName=TK65S04N1L
TK65S04N1L,LQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 65A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 32.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2550 pF @ 10 V
auf Bestellung 7976 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.69 EUR
10+3.06 EUR
100+2.43 EUR
500+2.06 EUR
1000+1.75 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK65S04N1L,LQ TK65S04N1L_datasheet_en_20200624-1858434.pdf
TK65S04N1L,LQ
Hersteller: Toshiba
MOSFETs UMOSVIII 40V 4.3m max(VGS=10V) DPAK
auf Bestellung 1540 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+5.37 EUR
10+3.45 EUR
100+2.4 EUR
500+1.93 EUR
1000+1.87 EUR
2000+1.67 EUR
Im Einkaufswagen  Stück im Wert von  UAH