Technische Details TK6A50D(STA4,Q,M) Toshiba
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 500V; 6A; Idm: 24A; 35W; TO220FP, Mounting: THT, Kind of package: tube, Drain current: 6A, Kind of channel: enhanced, Drain-source voltage: 500V, Type of transistor: N-MOSFET, Gate-source voltage: ±30V, Case: TO220FP, On-state resistance: 1.2Ω, Pulsed drain current: 24A, Power dissipation: 35W, Gate charge: 11nC, Polarisation: unipolar, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote TK6A50D(STA4,Q,M)
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TK6A50D(STA4,Q,M) | Hersteller : TOSHIBA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 6A; Idm: 24A; 35W; TO220FP Mounting: THT Kind of package: tube Drain current: 6A Kind of channel: enhanced Drain-source voltage: 500V Type of transistor: N-MOSFET Gate-source voltage: ±30V Case: TO220FP On-state resistance: 1.2Ω Pulsed drain current: 24A Power dissipation: 35W Gate charge: 11nC Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TK6A50D(STA4,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 500V 6A TO220SIS |
Produkt ist nicht verfügbar |
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TK6A50D(STA4,Q,M) | Hersteller : Toshiba |
MOSFET N-Ch MOS 6A 500V 35W 540pF 1.4 Ohm |
Produkt ist nicht verfügbar |
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TK6A50D(STA4,Q,M) | Hersteller : TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6A; Idm: 24A; 35W; TO220FP Mounting: THT Kind of package: tube Drain current: 6A Kind of channel: enhanced Drain-source voltage: 500V Type of transistor: N-MOSFET Gate-source voltage: ±30V Case: TO220FP On-state resistance: 1.2Ω Pulsed drain current: 24A Power dissipation: 35W Gate charge: 11nC Polarisation: unipolar |
Produkt ist nicht verfügbar |