auf Bestellung 330 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.63 EUR |
| 10+ | 2.29 EUR |
| 100+ | 1.87 EUR |
| 500+ | 1.4 EUR |
| 1000+ | 1.23 EUR |
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Technische Details TK6A65D(STA4,Q,M) Toshiba
Description: MOSFET N-CH 650V 6A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 1.11Ohm @ 3A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V.
Weitere Produktangebote TK6A65D(STA4,Q,M) nach Preis ab 3.84 EUR bis 3.84 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TK6A65D(STA4,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 650V 6A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 1.11Ohm @ 3A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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TK6A65DSTA4QM Produktcode: 143200
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Lieblingsprodukt
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Transistoren > MOSFET N-CH |
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TK6A65D(STA4,Q,M) | Hersteller : Toshiba |
Trans MOSFET N-CH Si 650V 6A 3-Pin(3+Tab) TO-220SIS |
Produkt ist nicht verfügbar |
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TK6A65D(STA4,Q,M) | Hersteller : Toshiba |
Trans MOSFET N-CH Si 650V 6A 3-Pin(3+Tab) TO-220SIS |
Produkt ist nicht verfügbar |
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TK6A65D(STA4,Q,M) | Hersteller : TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 24A; 45W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 24A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TK6A65D(STA4,Q,M) | Hersteller : TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 24A; 45W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 24A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |