Weitere Produktangebote TK6A65DSTA4QM nach Preis ab 1.63 EUR bis 5.15 EUR
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TK6A65D(STA4,Q,M) | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 650V 6A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 1.11Ohm @ 3A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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TK6A65D(STA4,Q,M) | Toshiba |
MOSFETs N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm |
auf Bestellung 341 Stücke: Lieferzeit 10-14 Tag (e) |
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TK6A65D(STA4,Q,M) | Toshiba |
Trans MOSFET N-CH Si 650V 6A 3-Pin(3+Tab) TO-220SIS |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TK6A65D(STA4,Q,M) |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.11Ohm @ 3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: MOSFET N-CH 650V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.11Ohm @ 3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.09 EUR |
| 50+ | 2.51 EUR |
| TK6A65D(STA4,Q,M) |
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Hersteller: Toshiba
MOSFETs N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm
MOSFETs N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm
auf Bestellung 341 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.15 EUR |
| 10+ | 2.56 EUR |
| 100+ | 2.34 EUR |
| 500+ | 1.78 EUR |
| 1000+ | 1.63 EUR |
| TK6A65D(STA4,Q,M) |
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Hersteller: Toshiba
Trans MOSFET N-CH Si 650V 6A 3-Pin(3+Tab) TO-220SIS
Trans MOSFET N-CH Si 650V 6A 3-Pin(3+Tab) TO-220SIS
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Mit diesem Produkt kaufen
| KLS6-MF72-20D11 Produktcode: 83755
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Lieblingsprodukt
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Hersteller: KLS
Passive Bauelemente > Thermistoren
Beschreibung: NTC Thermistor, 20 Ohm, 2A, D = 12,5mm
Widerstand: 20 Ohm
Anwendung: Schutz
Max. Strom: 2 A
Typ: NTC
Größe: D=11 мм
Passive Bauelemente > Thermistoren
Beschreibung: NTC Thermistor, 20 Ohm, 2A, D = 12,5mm
Widerstand: 20 Ohm
Anwendung: Schutz
Max. Strom: 2 A
Typ: NTC
Größe: D=11 мм
auf Bestellung: 1680 St.
- 1680 St. - Lieferzeit 21-28 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 0.19 EUR |
| 10+ | 0.12 EUR |
| 100+ | 0.08 EUR |