Weitere Produktangebote TK6A65DSTA4QM nach Preis ab 1.24 EUR bis 5.15 EUR
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TK6A65D(STA4,Q,M) | TOSHIBA |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 24A; 45W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 24A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 494 Stücke: Lieferzeit 14-21 Tag (e) |
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TK6A65D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 6A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 1.11Ohm @ 3A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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TK6A65D(STA4,Q,M) | Toshiba |
MOSFETs N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm |
auf Bestellung 341 Stücke: Lieferzeit 10-14 Tag (e) |
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TK6A65D(STA4,Q,M) | Toshiba |
Trans MOSFET N-CH Si 650V 6A 3-Pin(3+Tab) TO-220SIS |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TK6A65D(STA4,Q,M) |
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Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 24A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 24A; 45W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 494 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 2.94 EUR |
| 38+ | 2.3 EUR |
| 43+ | 2.02 EUR |
| 55+ | 1.57 EUR |
| 100+ | 1.39 EUR |
| 250+ | 1.24 EUR |
| TK6A65D(STA4,Q,M) |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.11Ohm @ 3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
Description: MOSFET N-CH 650V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.11Ohm @ 3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.09 EUR |
| 50+ | 2.51 EUR |
| TK6A65D(STA4,Q,M) |
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Hersteller: Toshiba
MOSFETs N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm
MOSFETs N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm
auf Bestellung 341 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.15 EUR |
| 10+ | 2.56 EUR |
| 100+ | 2.34 EUR |
| 500+ | 1.78 EUR |
| 1000+ | 1.63 EUR |
| TK6A65D(STA4,Q,M) |
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Hersteller: Toshiba
Trans MOSFET N-CH Si 650V 6A 3-Pin(3+Tab) TO-220SIS
Trans MOSFET N-CH Si 650V 6A 3-Pin(3+Tab) TO-220SIS
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Mit diesem Produkt kaufen
| KLS6-MF72-20D11 Produktcode: 83755
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Lieblingsprodukt
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Hersteller: KLS
Passive Bauelemente > Thermistoren
Beschreibung: NTC Thermistor, 20 Ohm, 2A, D = 12,5mm
Nennwiderstand: 20 Ohm
Anwendung: Schützend
Max. Strom: 2 A
Typ: NTC
Größe: D=11 mm
Passive Bauelemente > Thermistoren
Beschreibung: NTC Thermistor, 20 Ohm, 2A, D = 12,5mm
Nennwiderstand: 20 Ohm
Anwendung: Schützend
Max. Strom: 2 A
Typ: NTC
Größe: D=11 mm
auf Bestellung 1686 St.:
Lieferzeit 21-28 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 0.19 EUR |
| 10+ | 0.12 EUR |
| 100+ | 0.08 EUR |