TK6A65D(STA4,Q,M) TOSHIBA
Hersteller: TOSHIBACategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 24A; 45W; TO220FP
Mounting: THT
Case: TO220FP
Drain-source voltage: 650V
Drain current: 6A
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 45W
Polarisation: unipolar
Kind of package: tube
Gate charge: 20nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 24A
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 37+ | 1.94 EUR |
| 48+ | 1.50 EUR |
| 76+ | 0.94 EUR |
| 80+ | 0.90 EUR |
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Technische Details TK6A65D(STA4,Q,M) TOSHIBA
Description: MOSFET N-CH 650V 6A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 1.11Ohm @ 3A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V.
Weitere Produktangebote TK6A65D(STA4,Q,M) nach Preis ab 0.87 EUR bis 3.91 EUR
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TK6A65D(STA4,Q,M) | Hersteller : TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 24A; 45W; TO220FP Mounting: THT Case: TO220FP Drain-source voltage: 650V Drain current: 6A On-state resistance: 0.95Ω Type of transistor: N-MOSFET Power dissipation: 45W Polarisation: unipolar Kind of package: tube Gate charge: 20nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 24A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 104 Stücke: Lieferzeit 7-14 Tag (e) |
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TK6A65D(STA4,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 6A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 1.11Ohm @ 3A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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TK6A65D(STA4,Q,M) | Hersteller : Toshiba |
MOSFETs N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm |
auf Bestellung 364 Stücke: Lieferzeit 10-14 Tag (e) |
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TK6A65DSTA4QM Produktcode: 143200
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