Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TK6A65D(STA4,Q,M)
TK6A65D(STA4,Q,M)

TK6A65D(STA4,Q,M) Toshiba Semiconductor and Storage

TK6A65D_datasheet_en_20131101.pdf?did=22770&prodName=TK6A65D Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 1.11Ohm @ 3A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V
auf Bestellung 34 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.04 EUR
Mindestbestellmenge: 6
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Technische Details TK6A65D(STA4,Q,M) Toshiba Semiconductor and Storage

Description: MOSFET N-CH 650V 6A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 1.11Ohm @ 3A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V.

Weitere Produktangebote TK6A65D(STA4,Q,M) nach Preis ab 1.97 EUR bis 4.52 EUR

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Preis ohne MwSt
TK6A65D(STA4,Q,M) TK6A65D(STA4,Q,M) Hersteller : Toshiba TK6A65D_datasheet_en_20131101-1151080.pdf MOSFET N-Ch FET 650V 4.0s IDSS 10 uA .95 Ohm
auf Bestellung 121 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
12+4.52 EUR
15+ 3.64 EUR
100+ 3.33 EUR
250+ 2.76 EUR
500+ 2.47 EUR
1000+ 2.04 EUR
5000+ 1.97 EUR
Mindestbestellmenge: 12
TK6A65DSTA4QM
Produktcode: 143200 		Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
TK6A65D(STA4,Q,M) TK6A65D(STA4,Q,M) Hersteller : Toshiba 1285docget.jsplangenpidtk6a65dtypedatasheet.jsplangenpidtk6a65dtypeda.pdf Trans MOSFET N-CH Si 650V 6A 3-Pin(3+Tab) TO-220SIS
Produkt ist nicht verfügbar
TK6A65D(STA4,Q,M) TK6A65D(STA4,Q,M) Hersteller : Toshiba 1285docget.jsplangenpidtk6a65dtypedatasheet.jsplangenpidtk6a65dtypeda.pdf Trans MOSFET N-CH Si 650V 6A 3-Pin(3+Tab) TO-220SIS
Produkt ist nicht verfügbar
TK6A65D(STA4,Q,M) TK6A65D(STA4,Q,M) Hersteller : TOSHIBA TK6A65D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 24A; 45W; TO220FP
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 45W
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 24A
Case: TO220FP
Drain-source voltage: 650V
Drain current: 6A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TK6A65D(STA4,Q,M) TK6A65D(STA4,Q,M) Hersteller : TOSHIBA TK6A65D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 24A; 45W; TO220FP
Mounting: THT
Kind of package: tube
Polarisation: unipolar
On-state resistance: 0.95Ω
Type of transistor: N-MOSFET
Power dissipation: 45W
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 24A
Case: TO220FP
Drain-source voltage: 650V
Drain current: 6A
Produkt ist nicht verfügbar