| Anzahl | Preis |
|---|---|
| 1+ | 4.52 EUR |
| 10+ | 2.25 EUR |
| 100+ | 2.24 EUR |
| 500+ | 1.65 EUR |
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Technische Details TK6A80E,S4X Toshiba
Description: MOSFET N-CH 800V 6A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 4V @ 600µA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V.
Weitere Produktangebote TK6A80E,S4X nach Preis ab 4.52 EUR bis 4.52 EUR
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TK6A80E,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 800V 6A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 1.7Ohm @ 3A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 600µA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
auf Bestellung 42 Stücke: Lieferzeit 10-14 Tag (e) |
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TK6A80E,S4X | Hersteller : Toshiba |
Trans MOSFET N-CH Si 800V 6A Tube |
Produkt ist nicht verfügbar |