TK6P60W,RVQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 6.2A DPAK
Rds On (Max) @ Id, Vgs: 820mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.7V @ 310µA
Power Dissipation (Max): 60W (Tc)
| Anzahl | Preis |
|---|---|
| 4+ | 4.45 EUR |
| 10+ | 2.88 EUR |
| 100+ | 1.98 EUR |
| 500+ | 1.6 EUR |
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Technische Details TK6P60W,RVQ Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 6.2A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 3.7V @ 310µA, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 820mOhm @ 3.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote TK6P60W,RVQ nach Preis ab 1.76 EUR bis 5.05 EUR
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TK6P60W,RVQ | Hersteller : Toshiba |
MOSFETs N-Ch 9.7A 100W FET 600V 700pF 20nC |
auf Bestellung 4523 Stücke: Lieferzeit 10-14 Tag (e) |
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TK6P60W,RVQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 6.2A DPAK Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3.7V @ 310µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 820mOhm @ 3.1A, 10V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
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