TK6P65W,RQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
Description: MOSFET N-CH 650V 5.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
auf Bestellung 2008 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.16 EUR |
| 10+ | 1.76 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.16 EUR |
| 1000+ | 0.95 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK6P65W,RQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 180µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V.
Weitere Produktangebote TK6P65W,RQ nach Preis ab 0.9 EUR bis 2.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
TK6P65W,RQ | Hersteller : Toshiba |
 MOSFETs Power MOSFET N-Channel |
auf Bestellung 7484 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
TK6P65W,RQ | Hersteller : Toshiba |
Trans MOSFET N-CH Si 650V 5.8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
TK6P65W,RQ | Hersteller : Toshiba |
Trans MOSFET N-CH Si 650V 5.8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
TK6P65W,RQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 5.8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 180µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V |
Produkt ist nicht verfügbar |