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TK6P65W,RQ

TK6P65W,RQ Toshiba Semiconductor and Storage


Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2008 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.16 EUR
10+1.76 EUR
100+1.37 EUR
500+1.16 EUR
1000+0.95 EUR
Mindestbestellmenge: 9
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Technische Details TK6P65W,RQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 650V 5.8A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 3.5V @ 180µA, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

Weitere Produktangebote TK6P65W,RQ nach Preis ab 1.09 EUR bis 3.45 EUR

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TK6P65W,RQ TK6P65W,RQ Hersteller : Toshiba 4132453432423145454141313246334431314646464244303035443137314532.pdf MOSFETs Power MOSFET N-Channel
auf Bestellung 7464 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.45 EUR
10+2.22 EUR
100+1.5 EUR
500+1.2 EUR
1000+1.1 EUR
2000+1.09 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TK6P65W,RQ TK6P65W,RQ Hersteller : Toshiba Semiconductor and Storage Description: MOSFET N-CH 650V 5.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH