| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.42 EUR |
| 10+ | 1.64 EUR |
| 100+ | 1.46 EUR |
| 500+ | 1.15 EUR |
| 2000+ | 0.98 EUR |
| 24000+ | 0.92 EUR |
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Technische Details TK6P65W,RQ Toshiba
Description: MOSFET N-CH 650V 5.8A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 3.5V @ 180µA, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote TK6P65W,RQ nach Preis ab 1.18 EUR bis 3.47 EUR
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TK6P65W,RQ | Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 650V 5.8A DPAKInput Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3.5V @ 180µA Power Dissipation (Max): 60W (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 1951 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK6P65W,RQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 650V 5.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1951 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.47 EUR |
| 10+ | 2.21 EUR |
| 50+ | 1.67 EUR |
| 100+ | 1.49 EUR |
| 500+ | 1.18 EUR |