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TK6R7P06PL,RQ

TK6R7P06PL,RQ Toshiba Semiconductor and Storage

TK6R7P06PL_datasheet_en_20210127.pdf?did=57939&prodName=TK6R7P06PL Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CHANNEL 60V 46A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.61 EUR
5000+ 0.58 EUR
12500+ 0.55 EUR
Mindestbestellmenge: 2500
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Technische Details TK6R7P06PL,RQ Toshiba Semiconductor and Storage

Description: MOSFET N-CHANNEL 60V 46A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V, Power Dissipation (Max): 66W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 300µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V.

Weitere Produktangebote TK6R7P06PL,RQ nach Preis ab 0.65 EUR bis 2.47 EUR

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Preis ohne MwSt
TK6R7P06PL,RQ TK6R7P06PL,RQ Hersteller : Toshiba Semiconductor and Storage TK6R7P06PL_datasheet_en_20210127.pdf?did=57939&prodName=TK6R7P06PL Description: MOSFET N-CHANNEL 60V 46A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 23A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V
auf Bestellung 25753 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.48 EUR
15+ 1.2 EUR
100+ 0.94 EUR
500+ 0.79 EUR
1000+ 0.65 EUR
Mindestbestellmenge: 12
TK6R7P06PL,RQ TK6R7P06PL,RQ Hersteller : Toshiba TK6R7P06PL_datasheet_en_20210127-1142575.pdf MOSFET N-Ch 60V 1990pF 26nC 74A 66W
auf Bestellung 29509 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
22+2.47 EUR
24+ 2.22 EUR
100+ 1.73 EUR
500+ 1.43 EUR
1000+ 1.13 EUR
2500+ 1.05 EUR
Mindestbestellmenge: 22
TK6R7P06PL,RQ TK6R7P06PL,RQ Hersteller : Toshiba tk6r7p06pl_datasheet_en_20210127.pdf Trans MOSFET N-CH Si 60V 74A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
TK6R7P06PL,RQ Hersteller : Toshiba tk6r7p06pl_datasheet_en_20210127.pdf Trans MOSFET N-CH Si 60V 74A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
TK6R7P06PL,RQ TK6R7P06PL,RQ Hersteller : Toshiba tk6r7p06pl_datasheet_en_20210127.pdf Trans MOSFET N-CH Si 60V 74A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar