TK6R9P08QM,RQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: UMOS10 DPAK 80V 6.9MOHM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 31A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.08 EUR |
| 5000+ | 1.03 EUR |
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Technische Details TK6R9P08QM,RQ Toshiba Semiconductor and Storage
Description: UMOS10 DPAK 80V 6.9MOHM, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 6.9mOhm @ 31A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 500µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V.
Weitere Produktangebote TK6R9P08QM,RQ nach Preis ab 1.05 EUR bis 2.65 EUR
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TK6R9P08QM,RQ | Hersteller : Toshiba Semiconductor and Storage |
Description: UMOS10 DPAK 80V 6.9MOHM Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 31A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 500µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V |
auf Bestellung 5936 Stücke: Lieferzeit 21-28 Tag (e) |
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TK6R9P08QM,RQ | Hersteller : Toshiba |
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TK6R9P08QM,RQ | Hersteller : Toshiba |
Trans MOSFET N-CH Si 80V 62A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |