| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.59 EUR |
| 10+ | 1.74 EUR |
| 100+ | 1.21 EUR |
| 500+ | 1.06 EUR |
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Technische Details TK6R9P08QM,RQ Toshiba
Description: UMOS10 DPAK 80V 6.9MOHM, Technology: MOSFET (Metal Oxide), Operating Temperature: 175°C, Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 3.5V @ 500µA, Power Dissipation (Max): 89W (Tc), Rds On (Max) @ Id, Vgs: 6.9mOhm @ 31A, 10V, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), FET Type: N-Channel.
Weitere Produktangebote TK6R9P08QM,RQ nach Preis ab 1.2 EUR bis 3.17 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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TK6R9P08QM,RQ | Toshiba Semiconductor and Storage |
 Description: UMOS10 DPAK 80V 6.9MOHMMounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3.5V @ 500µA Power Dissipation (Max): 89W (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 31A, 10V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 175°C |
auf Bestellung 807 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK6R9P08QM,RQ |
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Hersteller: Toshiba Semiconductor and Storage
Description: UMOS10 DPAK 80V 6.9MOHM
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
Description: UMOS10 DPAK 80V 6.9MOHM
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Power Dissipation (Max): 89W (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C
auf Bestellung 807 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.17 EUR |
| 10+ | 2.21 EUR |
| 100+ | 1.52 EUR |
| 500+ | 1.2 EUR |