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TK6R9P08QM,RQ

TK6R9P08QM,RQ Toshiba

TK6R9P08QM_datasheet_en_20221219-2486471.pdf Hersteller: Toshiba
MOSFETs UMOS10 DPAK 80V 6.9mohm
auf Bestellung 25028 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.18 EUR
10+1.46 EUR
100+1.02 EUR
500+0.89 EUR
Mindestbestellmenge: 2
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Technische Details TK6R9P08QM,RQ Toshiba

Description: UMOS10 DPAK 80V 6.9MOHM, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 6.9mOhm @ 31A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 500µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V.

Weitere Produktangebote TK6R9P08QM,RQ nach Preis ab 0.79 EUR bis 2.59 EUR

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TK6R9P08QM,RQ TK6R9P08QM,RQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=70424&prodName=TK6R9P08QM Description: UMOS10 DPAK 80V 6.9MOHM
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 31A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
auf Bestellung 1475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
11+1.64 EUR
100+1.10 EUR
500+0.87 EUR
1000+0.79 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
TK6R9P08QM,RQ TK6R9P08QM,RQ Hersteller : Toshiba docget.pdf Trans MOSFET N-CH Si 80V 62A T/R
Produkt ist nicht verfügbar
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TK6R9P08QM,RQ TK6R9P08QM,RQ Hersteller : Toshiba docget.pdf Trans MOSFET N-CH Si 80V 62A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK6R9P08QM,RQ TK6R9P08QM,RQ Hersteller : Toshiba docget.pdf Trans MOSFET N-CH Si 80V 62A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK6R9P08QM,RQ TK6R9P08QM,RQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=70424&prodName=TK6R9P08QM Description: UMOS10 DPAK 80V 6.9MOHM
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 31A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH