TK72E12N1,S1X Toshiba
auf Bestellung 19250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 70+ | 2.14 EUR |
| 100+ | 1.88 EUR |
| 500+ | 1.50 EUR |
| 1000+ | 1.34 EUR |
| 2000+ | 1.24 EUR |
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Technische Details TK72E12N1,S1X Toshiba
Description: MOSFET N CH 120V 72A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Ta), Rds On (Max) @ Id, Vgs: 4.4mOhm @ 36A, 10V, Power Dissipation (Max): 255W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 60 V.
Weitere Produktangebote TK72E12N1,S1X nach Preis ab 1.24 EUR bis 4.80 EUR
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TK72E12N1,S1X | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 120V 179A 3-Pin(3+Tab) TO-220 Magazine |
auf Bestellung 19250 Stücke: Lieferzeit 14-21 Tag (e) |
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TK72E12N1,S1X | Hersteller : Toshiba |
MOSFETs N-Ch 120V 179A 225W UMOSVIII 130nC .0044 |
auf Bestellung 1550 Stücke: Lieferzeit 146-150 Tag (e) |
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TK72E12N1,S1X | Hersteller : Toshiba |
Trans MOSFET N-CH Si 120V 179A 3-Pin(3+Tab) TO-220 Magazine |
Produkt ist nicht verfügbar |
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| TK72E12N1,S1X | Hersteller : Toshiba |
Trans MOSFET N-CH Si 120V 179A 3-Pin(3+Tab) TO-220 Magazine |
Produkt ist nicht verfügbar |
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TK72E12N1,S1X | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N CH 120V 72A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Ta) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 36A, 10V Power Dissipation (Max): 255W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8100 pF @ 60 V |
Produkt ist nicht verfügbar |