TK7E80W,S1X Toshiba Semiconductor and Storage

Description: MOSFET N-CH 800V 6.5A TO220, Packaging: Tube, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 4V @ 280µA, Power Dissipation (Max): 110W (Tc), Rds On (Max) @ Id, Vgs: 950mOhm @ 3.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C, Mounting Type: Through Hole, Package / Case: TO-220-3, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V.