| Anzahl | Preis |
|---|---|
| 1+ | 4.49 EUR |
| 10+ | 3.96 EUR |
| 25+ | 3.17 EUR |
| 50+ | 2.96 EUR |
| 100+ | 2.53 EUR |
| 250+ | 2.22 EUR |
| 500+ | 1.85 EUR |
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Technische Details TK7J90E,S1E Toshiba
Description: MOSFET N-CH 900V 7A TO3P, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-3P(N), Vgs(th) (Max) @ Id: 4V @ 700µA, Power Dissipation (Max): 200W (Tc), Rds On (Max) @ Id, Vgs: 2Ohm @ 3.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3.
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TK7J90E,S1E | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 900V 7A TO3PPackaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-3P(N) Vgs(th) (Max) @ Id: 4V @ 700µA Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 3.5A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 |
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