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TK7P60W5,RVQ

TK7P60W5,RVQ Toshiba

125docget.jsppidtk7p60w5langentypedatasheet.jsppidtk7p60w5langentype.pdf Hersteller: Toshiba
Trans MOSFET N-CH Si 600V 7A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
91+1.73 EUR
109+ 1.39 EUR
250+ 1.32 EUR
500+ 1.09 EUR
1000+ 0.91 EUR
2000+ 0.82 EUR
Mindestbestellmenge: 91
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Technische Details TK7P60W5,RVQ Toshiba

Description: MOSFET N-CH 600V 7A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 350µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V.

Weitere Produktangebote TK7P60W5,RVQ nach Preis ab 0.78 EUR bis 2.45 EUR

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Preis ohne MwSt
TK7P60W5,RVQ TK7P60W5,RVQ Hersteller : Toshiba 125docget.jsppidtk7p60w5langentypedatasheet.jsppidtk7p60w5langentype.pdf Trans MOSFET N-CH Si 600V 7A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
80+1.98 EUR
91+ 1.67 EUR
109+ 1.33 EUR
250+ 1.27 EUR
500+ 1.05 EUR
1000+ 0.87 EUR
2000+ 0.78 EUR
Mindestbestellmenge: 80
TK7P60W5,RVQ TK7P60W5,RVQ Hersteller : Toshiba Semiconductor and Storage TK7P60W5_datasheet_en_20140917.pdf?did=14494&prodName=TK7P60W5 Description: MOSFET N-CH 600V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
auf Bestellung 1203 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.45 EUR
10+ 2.04 EUR
100+ 1.62 EUR
500+ 1.37 EUR
1000+ 1.16 EUR
Mindestbestellmenge: 8
TK7P60W5,RVQ TK7P60W5,RVQ Hersteller : Toshiba 125docget.jsppidtk7p60w5langentypedatasheet.jsppidtk7p60w5langentype.pdf Trans MOSFET N-CH Si 600V 7A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
TK7P60W5,RVQ TK7P60W5,RVQ Hersteller : Toshiba Semiconductor and Storage TK7P60W5_datasheet_en_20140917.pdf?did=14494&prodName=TK7P60W5 Description: MOSFET N-CH 600V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 350µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Produkt ist nicht verfügbar
TK7P60W5,RVQ TK7P60W5,RVQ Hersteller : Toshiba TK7P60W5_datasheet_en_20140917-1150887.pdf MOSFET DTMOSIV 600V 600mOhm DPKw/Hgh Speed Diode
Produkt ist nicht verfügbar