auf Bestellung 2611 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.22 EUR |
| 10+ | 1.61 EUR |
| 25+ | 1.6 EUR |
| 100+ | 1.24 EUR |
| 500+ | 1.14 EUR |
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Technische Details TK7P65W,RQ Toshiba
Description: MOSFET N-CH 650V 6.8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V.
Weitere Produktangebote TK7P65W,RQ nach Preis ab 1.17 EUR bis 2.46 EUR
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TK7P65W,RQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 6.8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V |
auf Bestellung 1408 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK7P65W,RQ | Hersteller : Toshiba |
 Trans MOSFET N-CH Si 650V 6.8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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TK7P65W,RQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 6.8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V |
Produkt ist nicht verfügbar |