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TK7P65W,RQ

TK7P65W,RQ Toshiba Semiconductor and Storage


Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 6.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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Technische Details TK7P65W,RQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 650V 6.8A DPAK, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 60W (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).

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TK7P65W,RQ TK7P65W,RQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 650V 6.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK7P65W,RQ TK7P65W,RQ Toshiba 21E89039248D43E34E4641642648ABA94084B0B5EA09BE559A824FBCF2E50C5D.pdf MOSFETs Power MOSFET N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK7P65W,RQ
TK7P65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 6.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TK7P65W,RQ 21E89039248D43E34E4641642648ABA94084B0B5EA09BE559A824FBCF2E50C5D.pdf
TK7P65W,RQ
Hersteller: Toshiba
MOSFETs Power MOSFET N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH