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TK7R7P10PL,RQ

TK7R7P10PL,RQ Toshiba Semiconductor and Storage

TK7R7P10PL_datasheet_en_20210127.pdf?did=60584&prodName=TK7R7P10PL Hersteller: Toshiba Semiconductor and Storage
Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 27.5A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.69 EUR
Mindestbestellmenge: 2500
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Technische Details TK7R7P10PL,RQ Toshiba Semiconductor and Storage

Description: X35 PB-F POWER MOSFET TRANSISTOR, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 7.7mOhm @ 27.5A, 10V, Power Dissipation (Max): 93W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V.

Weitere Produktangebote TK7R7P10PL,RQ nach Preis ab 0.92 EUR bis 2.47 EUR

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TK7R7P10PL,RQ TK7R7P10PL,RQ Hersteller : Toshiba Semiconductor and Storage TK7R7P10PL_datasheet_en_20210127.pdf?did=60584&prodName=TK7R7P10PL Description: X35 PB-F POWER MOSFET TRANSISTOR
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 7.7mOhm @ 27.5A, 10V
Power Dissipation (Max): 93W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 50 V
auf Bestellung 2564 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.67 EUR
100+ 1.33 EUR
500+ 1.12 EUR
1000+ 0.92 EUR
Mindestbestellmenge: 11
TK7R7P10PL,RQ TK7R7P10PL,RQ Hersteller : Toshiba TK7R7P10PL_datasheet_en_20210127-2509675.pdf MOSFET Pb-F POWER MOSFET TRANSISTOR DPAK PD=93W F=1MHZ
auf Bestellung 1659 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
22+2.47 EUR
26+ 2.03 EUR
100+ 1.58 EUR
500+ 1.34 EUR
1000+ 1.09 EUR
2500+ 1.02 EUR
5000+ 0.98 EUR
Mindestbestellmenge: 22