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TK7S10N1Z,LQ

TK7S10N1Z,LQ Toshiba Semiconductor and Storage

TK7S10N1Z_datasheet_en_20200624.pdf?did=15153&prodName=TK7S10N1Z Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 7A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.92 EUR
4000+0.90 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TK7S10N1Z,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 100V 7A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote TK7S10N1Z,LQ nach Preis ab 0.93 EUR bis 2.38 EUR

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TK7S10N1Z,LQ TK7S10N1Z,LQ Hersteller : Toshiba TK7S10N1Z_datasheet_en_20200624-1915289.pdf MOSFETs 60W 1MHz Automotive; AEC-Q101
auf Bestellung 4660 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.27 EUR
10+1.76 EUR
25+1.69 EUR
100+1.24 EUR
500+1.01 EUR
1000+0.93 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TK7S10N1Z,LQ TK7S10N1Z,LQ Hersteller : Toshiba Semiconductor and Storage TK7S10N1Z_datasheet_en_20200624.pdf?did=15153&prodName=TK7S10N1Z Description: MOSFET N-CH 100V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 3.5A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6874 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.38 EUR
10+1.85 EUR
100+1.30 EUR
500+1.10 EUR
1000+1.01 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH