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TK8A50D(STA4,Q,M)

TK8A50D(STA4,Q,M) TOSHIBA

TK8A50D.pdf Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 535 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
45+1.6 EUR
50+ 1.43 EUR
57+ 1.27 EUR
65+ 1.1 EUR
69+ 1.04 EUR
Mindestbestellmenge: 45
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Technische Details TK8A50D(STA4,Q,M) TOSHIBA

Description: MOSFET N-CH 500V 8A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V.

Weitere Produktangebote TK8A50D(STA4,Q,M) nach Preis ab 1.04 EUR bis 3.9 EUR

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TK8A50D(STA4,Q,M) TK8A50D(STA4,Q,M) Hersteller : TOSHIBA TK8A50D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 535 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
45+1.6 EUR
50+ 1.43 EUR
57+ 1.27 EUR
65+ 1.1 EUR
69+ 1.04 EUR
Mindestbestellmenge: 45
TK8A50D(STA4,Q,M) TK8A50D(STA4,Q,M) Hersteller : Toshiba Semiconductor and Storage TK8A50D_datasheet_en_20131101.pdf?did=21785&prodName=TK8A50D Description: MOSFET N-CH 500V 8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 123 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.87 EUR
50+ 3.11 EUR
100+ 2.46 EUR
Mindestbestellmenge: 7
TK8A50D(STA4,Q,M) TK8A50D(STA4,Q,M) Hersteller : Toshiba TK8A50D_datasheet_en_20131101-1150867.pdf MOSFET N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm
auf Bestellung 2064 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.9 EUR
20+ 2.65 EUR
100+ 1.83 EUR
500+ 1.77 EUR
1000+ 1.64 EUR
2500+ 1.61 EUR
5000+ 1.54 EUR
Mindestbestellmenge: 14
TK8A50D(STA4,Q,M) TK8A50D(STA4,Q,M) Hersteller : Toshiba 18dst_tk8a50d-tde_en_8998.pdf Trans MOSFET N-CH Si 500V 8A 3-Pin(3+Tab) TO-220SIS
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