TK8A50D(STA4,Q,M) TOSHIBA
Hersteller: TOSHIBACategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 331 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 34+ | 2.13 EUR |
| 55+ | 1.32 EUR |
| 66+ | 1.09 EUR |
| 100+ | 1 EUR |
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Technische Details TK8A50D(STA4,Q,M) TOSHIBA
Description: MOSFET N-CH 500V 8A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V.
Weitere Produktangebote TK8A50D(STA4,Q,M) nach Preis ab 1 EUR bis 3.26 EUR
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TK8A50D(STA4,Q,M) | Hersteller : TOSHIBA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 40W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 32A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 331 Stücke: Lieferzeit 14-21 Tag (e) |
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TK8A50D(STA4,Q,M) | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 500V 8A TO220SIS Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
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TK8A50D(STA4,Q,M) | Hersteller : Toshiba |
MOSFETs N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm |
auf Bestellung 337 Stücke: Lieferzeit 10-14 Tag (e) |
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TK8A50D(STA4,Q,M) | Hersteller : Toshiba |
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