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TK8A50D(STA4,Q,M)

TK8A50D(STA4,Q,M) TOSHIBA

pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8FCF9FD6DFA120C4&compId=TK8A50D.pdf?ci_sign=6ce8569d7ae4acafa620224d84a29410f0f65cae Hersteller: TOSHIBA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 336 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
35+2.04 EUR
52+1.39 EUR
65+1.12 EUR
100+1.02 EUR
500+1 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details TK8A50D(STA4,Q,M) TOSHIBA

Description: MOSFET N-CH 500V 8A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V.

Weitere Produktangebote TK8A50D(STA4,Q,M) nach Preis ab 0.95 EUR bis 3.63 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TK8A50D(STA4,Q,M) TK8A50D(STA4,Q,M) Hersteller : TOSHIBA pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8FCF9FD6DFA120C4&compId=TK8A50D.pdf?ci_sign=6ce8569d7ae4acafa620224d84a29410f0f65cae Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 336 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.04 EUR
52+1.39 EUR
65+1.12 EUR
100+1.02 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
TK8A50D(STA4,Q,M) TK8A50D(STA4,Q,M) Hersteller : Toshiba A253D62E1ABEE573D5B97C758119AC26A8AC0817914B7902E9CC688F00A9AD73.pdf MOSFETs N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.13 EUR
10+1.59 EUR
100+1.54 EUR
500+1.22 EUR
1000+0.96 EUR
5000+0.95 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TK8A50D(STA4,Q,M) TK8A50D(STA4,Q,M) Hersteller : Toshiba Semiconductor and Storage TK8A50D_datasheet_en_20131101.pdf?did=21785&prodName=TK8A50D Description: MOSFET N-CH 500V 8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 93 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
50+1.76 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TK8A50D(STA4,Q,M) TK8A50D(STA4,Q,M) Hersteller : Toshiba 18dst_tk8a50d-tde_en_8998.pdf Trans MOSFET N-CH Si 500V 8A 3-Pin(3+Tab) TO-220SIS
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