Weitere Produktangebote TK8A65D(STA4,Q,M) nach Preis ab 1.81 EUR bis 5.38 EUR
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TK8A65D(STA4,Q,M) | Toshiba |
 MOSFETs N-Ch FET 650V 4.5s IDSS 10 uA 0.7 Ohm |
auf Bestellung 233 Stücke: Lieferzeit 10-14 Tag (e) |
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TK8A65D(STA4,Q,M) | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 8A TO220SIS Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 840mOhm @ 4A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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| TK8A65D(STA4,Q,M) |
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Hersteller: Toshiba
MOSFETs N-Ch FET 650V 4.5s IDSS 10 uA 0.7 Ohm
MOSFETs N-Ch FET 650V 4.5s IDSS 10 uA 0.7 Ohm
auf Bestellung 233 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.28 EUR |
| 10+ | 2.68 EUR |
| 100+ | 2.51 EUR |
| 500+ | 1.96 EUR |
| 1000+ | 1.81 EUR |
| TK8A65D(STA4,Q,M) |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 8A TO220SIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 840mOhm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Description: MOSFET N-CH 650V 8A TO220SIS
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 840mOhm @ 4A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.38 EUR |