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TK8P60W,RVQ

TK8P60W,RVQ Toshiba


384docget.jsppidtk8p60wlangentypedatasheet.jsppidtk8p60wlangentypeda.pdf Hersteller: Toshiba
Trans MOSFET N-CH Si 600V 8A 3-Pin(2+Tab) DPAK T/R
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Technische Details TK8P60W,RVQ Toshiba

Description: MOSFET N CH 600V 8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 400µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V.

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TK8P60W,RVQ TK8P60W,RVQ Hersteller : Toshiba 384docget.jsppidtk8p60wlangentypedatasheet.jsppidtk8p60wlangentypeda.pdf Trans MOSFET N-CH Si 600V 8A 3-Pin(2+Tab) DPAK T/R
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TK8P60W,RVQ TK8P60W,RVQ Hersteller : TOSHIBA TK8P60W.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 80W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
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TK8P60W,RVQ TK8P60W,RVQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=13675&prodName=TK8P60W Description: MOSFET N CH 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 400µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Produkt ist nicht verfügbar
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TK8P60W,RVQ TK8P60W,RVQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=13675&prodName=TK8P60W Description: MOSFET N CH 600V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 400µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
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TK8P60W,RVQ TK8P60W,RVQ Hersteller : Toshiba TK8P60W_datasheet_en_20140917-1139985.pdf MOSFET DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC
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TK8P60W,RVQ TK8P60W,RVQ Hersteller : TOSHIBA TK8P60W.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 80W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH