TK8P60W,RVQ TOSHIBA
Hersteller: TOSHIBACategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 80W; DPAK
Mounting: SMD
Drain-source voltage: 600V
Drain current: 8A
Gate charge: 18.5nC
Power dissipation: 80W
On-state resistance: 0.5Ω
Gate-source voltage: ±30V
Polarisation: unipolar
Kind of package: tube
Case: DPAK
Kind of channel: enhancement
Type of transistor: N-MOSFET
auf Bestellung 1950 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 60+ | 1.2 EUR |
| 67+ | 1.07 EUR |
| 74+ | 0.97 EUR |
| 100+ | 0.92 EUR |
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Technische Details TK8P60W,RVQ TOSHIBA
Description: MOSFET N CH 600V 8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 3.7V @ 400µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V.
Weitere Produktangebote TK8P60W,RVQ nach Preis ab 0.92 EUR bis 1.2 EUR
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TK8P60W,RVQ | Hersteller : TOSHIBA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 80W; DPAK Mounting: SMD Drain-source voltage: 600V Drain current: 8A Gate charge: 18.5nC Power dissipation: 80W On-state resistance: 0.5Ω Gate-source voltage: ±30V Polarisation: unipolar Kind of package: tube Case: DPAK Kind of channel: enhancement Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1950 Stücke: Lieferzeit 7-14 Tag (e) |
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TK8P60W,RVQ | Hersteller : Toshiba |
Trans MOSFET N-CH Si 600V 8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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TK8P60W,RVQ | Hersteller : Toshiba |
Trans MOSFET N-CH Si 600V 8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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TK8P60W,RVQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 400µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V |
Produkt ist nicht verfügbar |
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TK8P60W,RVQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 400µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V |
Produkt ist nicht verfügbar |
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TK8P60W,RVQ | Hersteller : Toshiba |
MOSFET DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC |
Produkt ist nicht verfügbar |