TK8P60W,RVQ TOSHIBA
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; 80W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 80W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 18.5nC
Kind of package: tube
Kind of channel: enhancement
| Anzahl | Privatkunde |
|---|---|
| 60+ | 1.43 EUR |
| 67+ | 1.27 EUR |
| 74+ | 1.15 EUR |
| 100+ | 1.09 EUR |
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Technische Details TK8P60W,RVQ TOSHIBA
Description: MOSFET N CH 600V 8A DPAK, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 3.7V @ 400µA, Power Dissipation (Max): 80W (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V.
Weitere Produktangebote TK8P60W,RVQ
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
TK8P60W,RVQ | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 8A DPAK Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3.7V @ 400µA Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
TK8P60W,RVQ | Toshiba Semiconductor and Storage |
Description: MOSFET N CH 600V 8A DPAK Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 3.7V @ 400µA Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
TK8P60W,RVQ | Toshiba |
MOSFET DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
TK8P60W,RVQ | Toshiba |
Trans MOSFET N-CH Si 600V 8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
TK8P60W,RVQ | Toshiba |
Trans MOSFET N-CH Si 600V 8A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TK8P60W,RVQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 8A DPAK
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.7V @ 400µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Description: MOSFET N CH 600V 8A DPAK
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.7V @ 400µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TK8P60W,RVQ |
|
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N CH 600V 8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.7V @ 400µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N CH 600V 8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.7V @ 400µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TK8P60W,RVQ |
|
Hersteller: Toshiba
MOSFET DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC
MOSFET DTMOSIV 600V 500mOhm 8A 80W 570pF 18.5nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TK8P60W,RVQ |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 600V 8A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 600V 8A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TK8P60W,RVQ |
|
Hersteller: Toshiba
Trans MOSFET N-CH Si 600V 8A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 600V 8A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH