TK8P60W5,RVQ Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: MOSFET N-CH 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 1.05 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details TK8P60W5,RVQ Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 560mOhm @ 4A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 400µA, Supplier Device Package: DPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V.
Weitere Produktangebote TK8P60W5,RVQ nach Preis ab 1.05 EUR bis 3.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
TK8P60W5,RVQ | Hersteller : Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 560mOhm @ 4A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 400µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V |
auf Bestellung 15437 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
TK8P60W5,RVQ | Hersteller : Toshiba |
MOSFET Power MOSFET N-Channel |
auf Bestellung 2002 Stücke: Lieferzeit 14-28 Tag (e) |
|