Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > TK8P65W,RQ
TK8P65W,RQ

TK8P65W,RQ Toshiba Semiconductor and Storage

docget.jsp?did=15485&prodName=TK8P65W Hersteller: Toshiba Semiconductor and Storage
Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
auf Bestellung 1974 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.89 EUR
10+2.3 EUR
100+1.82 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details TK8P65W,RQ Toshiba Semiconductor and Storage

Description: PB-F POWER MOSFET TRANSISTOR DPA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 300µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V.

Weitere Produktangebote TK8P65W,RQ nach Preis ab 1.34 EUR bis 2.99 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TK8P65W,RQ TK8P65W,RQ Hersteller : Toshiba TK8P65W_datasheet_en_20140917-1649738.pdf MOSFETs Pb-F POWER MOSFET TRANSISTOR DPAK(OS) PD=80W F=1MHZ
auf Bestellung 1798 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.99 EUR
10+2.39 EUR
25+2.31 EUR
100+1.71 EUR
500+1.4 EUR
1000+1.34 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TK8P65W,RQ TK8P65W,RQ Hersteller : Toshiba 8docget.jsplangenpidtk8p65wtypedatasheet.jsplangenpidtk8p65wtypeda.pdf Trans MOSFET N-CH Si 650V 7.8A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK8P65W,RQ TK8P65W,RQ Hersteller : Toshiba Semiconductor and Storage docget.jsp?did=15485&prodName=TK8P65W Description: PB-F POWER MOSFET TRANSISTOR DPA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH