TK8Q65W,S1Q Toshiba Semiconductor and Storage

Description: MOSFET N-CH 650V 7.8A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: I-PAK, Vgs(th) (Max) @ Id: 3.5V @ 300µA, Power Dissipation (Max): 80W (Tc), Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Stub Leads, IPak, Packaging: Tube.