auf Bestellung 5077 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.56 EUR |
| 10+ | 1.25 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.64 EUR |
| 5000+ | 0.63 EUR |
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Technische Details TK8R2A06PL,S4X Toshiba
Description: MOSFET N-CH 60V 50A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8A, 4.5V, Power Dissipation (Max): 36W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 300µA, Supplier Device Package: TO-220SIS, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V.
Weitere Produktangebote TK8R2A06PL,S4X nach Preis ab 1.16 EUR bis 2.38 EUR
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TK8R2A06PL,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 60V 50A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11.4mOhm @ 8A, 4.5V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 300µA Supplier Device Package: TO-220SIS Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V |
auf Bestellung 211 Stücke: Lieferzeit 10-14 Tag (e) |
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