TK8R2E06PL,S1X Toshiba Semiconductor and Storage

Description: PB-F POWER MOSFET TRANSISTOR TO-, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 10V, Power Dissipation (Max): 81W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 300µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V.