TK8R2E06PL,S1X Toshiba
auf Bestellung 244 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.99 EUR |
| 10+ | 1.44 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.03 EUR |
| 1000+ | 0.87 EUR |
| 5000+ | 0.85 EUR |
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Technische Details TK8R2E06PL,S1X Toshiba
Description: PB-F POWER MOSFET TRANSISTOR TO-, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 10V, Power Dissipation (Max): 81W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 300µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V.
Weitere Produktangebote TK8R2E06PL,S1X nach Preis ab 1.36 EUR bis 3.06 EUR
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TK8R2E06PL,S1X | Hersteller : Toshiba Semiconductor and Storage |
 Description: PB-F POWER MOSFET TRANSISTOR TO-Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 10V Power Dissipation (Max): 81W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 300µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 30 V |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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