TK90S06N1L,LQ

TK90S06N1L,LQ Toshiba Semiconductor and Storage


Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
auf Bestellung 711 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.36 EUR
10+2.79 EUR
100+2.22 EUR
500+1.88 EUR
Mindestbestellmenge: 6
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Technische Details TK90S06N1L,LQ Toshiba Semiconductor and Storage

Description: MOSFET N-CH 60V 90A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Ta), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V, Power Dissipation (Max): 157W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 500µA, Supplier Device Package: DPAK+, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V.

Weitere Produktangebote TK90S06N1L,LQ nach Preis ab 1.55 EUR bis 4.52 EUR

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TK90S06N1L,LQ TK90S06N1L,LQ Hersteller : Toshiba TK90S06N1L_datasheet_en_20200624-1858439.pdf MOSFETs UMOSVIII 60V 3.3m max(VGS=10V) DPAK
auf Bestellung 2409 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.52 EUR
10+2.97 EUR
100+2.09 EUR
500+1.69 EUR
1000+1.56 EUR
2000+1.55 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TK90S06N1L,LQ TK90S06N1L,LQ Hersteller : Toshiba Semiconductor and Storage Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 45A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 500µA
Supplier Device Package: DPAK+
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH