auf Bestellung 611 Stücke:
Lieferzeit 171-175 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.48 EUR |
| 10+ | 2.82 EUR |
| 100+ | 2.25 EUR |
| 250+ | 2.22 EUR |
| 500+ | 1.88 EUR |
| 1000+ | 1.57 EUR |
| 5000+ | 1.52 EUR |
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Technische Details TK9A90E,S4X Toshiba
Description: MOSFET N-CH 900V 9A TO220SIS, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4V @ 900µA, Supplier Device Package: TO-220SIS, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V.
Weitere Produktangebote TK9A90E,S4X
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TK9A90E,S4X | Hersteller : Toshiba Semiconductor and Storage |
 Description: MOSFET N-CH 900V 9A TO220SISPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 1.3Ohm @ 4.5A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 900µA Supplier Device Package: TO-220SIS Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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TK9A90E,S4X | Hersteller : Toshiba |
Trans MOSFET N-CH Si 900V 9A 3-Pin(3+Tab) TO-220SIS Tube |
Produkt ist nicht verfügbar |