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Technische Details TKR74F04PB Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 375W; TO220SM, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 250A, Power dissipation: 375W, Case: TO220SM, Gate-source voltage: ±20V, On-state resistance: 0.98mΩ, Mounting: SMD, Gate charge: 227nC, Kind of package: reel; tape, Kind of channel: enhancement.
Weitere Produktangebote TKR74F04PB
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| TKR74F04PB,LQ(O | TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 250A; 375W; TO220SM Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 250A Power dissipation: 375W Case: TO220SM Gate-source voltage: ±20V On-state resistance: 0.98mΩ Mounting: SMD Gate charge: 227nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TKR74F04PB,LQ(O |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 375W; TO220SM
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 375W
Case: TO220SM
Gate-source voltage: ±20V
On-state resistance: 0.98mΩ
Mounting: SMD
Gate charge: 227nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 375W; TO220SM
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 250A
Power dissipation: 375W
Case: TO220SM
Gate-source voltage: ±20V
On-state resistance: 0.98mΩ
Mounting: SMD
Gate charge: 227nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH