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Technische Details TKR74F04PB Toshiba
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 375W; TO220SM, Mounting: SMD, Case: TO220SM, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel; tape, On-state resistance: 0.98mΩ, Power dissipation: 375W, Gate charge: 227nC, Polarisation: unipolar, Drain current: 250A, Kind of channel: enhancement, Drain-source voltage: 40V.
Weitere Produktangebote TKR74F04PB
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| TKR74F04PB,LQ(O | TOSHIBA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 250A; 375W; TO220SM Mounting: SMD Case: TO220SM Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 0.98mΩ Power dissipation: 375W Gate charge: 227nC Polarisation: unipolar Drain current: 250A Kind of channel: enhancement Drain-source voltage: 40V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| TKR74F04PB,LQ(O |
|
Hersteller: TOSHIBA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 375W; TO220SM
Mounting: SMD
Case: TO220SM
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.98mΩ
Power dissipation: 375W
Gate charge: 227nC
Polarisation: unipolar
Drain current: 250A
Kind of channel: enhancement
Drain-source voltage: 40V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 250A; 375W; TO220SM
Mounting: SMD
Case: TO220SM
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.98mΩ
Power dissipation: 375W
Gate charge: 227nC
Polarisation: unipolar
Drain current: 250A
Kind of channel: enhancement
Drain-source voltage: 40V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH