TLP383(GB-TPL,E Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 2µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 6-SO, 4 Lead
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 5mA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Packaging: Box
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Technische Details TLP383(GB-TPL,E Toshiba Semiconductor and Storage
Description: MOSFET N-CH, Current - DC Forward (If) (Max): 50 mA, Number of Channels: 1, Rise / Fall Time (Typ): 2µs, 3µs, Turn On / Turn Off Time (Typ): 3µs, 3µs, Voltage - Output (Max): 80V, Supplier Device Package: 6-SO, 4 Lead, Current Transfer Ratio (Max): 600% @ 5mA, Vce Saturation (Max): 300mV, Current Transfer Ratio (Min): 100% @ 5mA, Voltage - Isolation: 5000Vrms, Current - Output / Channel: 50mA, Input Type: DC, Voltage - Forward (Vf) (Typ): 1.25V, Operating Temperature: -55°C ~ 125°C, Mounting Type: Surface Mount, Output Type: Transistor, Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads, Packaging: Box.