TMBT3906,LM Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SOT-23-3
Power - Max: 320 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.054 EUR |
| 6000+ | 0.048 EUR |
| 9000+ | 0.045 EUR |
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Technische Details TMBT3906,LM Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SOT-23-3, Power - Max: 320 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 150 mA, Part Status: Active, Supplier Device Package: SOT-23-3, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote TMBT3906,LM nach Preis ab 0.046 EUR bis 0.3 EUR
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TMBT3906,LM | Toshiba |
Bipolar Transistors - BJT Transistor for Low Freq. Amplification |
auf Bestellung 7887 Stücke: Lieferzeit 10-14 Tag (e) |
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TMBT3906,LM | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SOT-23-3 Power - Max: 320 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Part Status: Active Supplier Device Package: SOT-23-3 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 17700 Stücke: Lieferzeit 10-14 Tag (e) |
|
| TMBT3906,LM |
|
Hersteller: Toshiba
Bipolar Transistors - BJT Transistor for Low Freq. Amplification
Bipolar Transistors - BJT Transistor for Low Freq. Amplification
auf Bestellung 7887 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 0.29 EUR |
| 20+ | 0.18 EUR |
| 100+ | 0.11 EUR |
| 500+ | 0.077 EUR |
| 1000+ | 0.069 EUR |
| 3000+ | 0.055 EUR |
| 6000+ | 0.046 EUR |
| TMBT3906,LM |
|
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SOT-23-3
Power - Max: 320 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PNP 50V 0.15A SOT-23-3
Power - Max: 320 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Part Status: Active
Supplier Device Package: SOT-23-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 17700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 72+ | 0.3 EUR |
| 122+ | 0.17 EUR |
| 197+ | 0.11 EUR |
| 500+ | 0.077 EUR |
| 1000+ | 0.068 EUR |