Produkte > MICROCHIP TECHNOLOGY > TN0104N3-G-P003
TN0104N3-G-P003

TN0104N3-G-P003 Microchip Technology


TN0104_N_Channel_Enhancement_Mode_Vertical_DMOS_FE-3442251.pdf Hersteller: Microchip Technology
MOSFETs N-CH Enhancmnt Mode MOSFET
auf Bestellung 796 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.09 EUR
25+1.74 EUR
250+1.60 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details TN0104N3-G-P003 Microchip Technology

Description: MOSFET N-CH 40V 450MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 450mA (Ta), Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 1.6V @ 500µA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 20 V.

Weitere Produktangebote TN0104N3-G-P003

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
TN0104N3-G-P003 TN0104N3-G-P003 Hersteller : Microchip Technology 415tn0104.pdf Trans MOSFET N-CH Si 40V 0.45A 3-Pin TO-92 T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TN0104N3-G-P003 Hersteller : MICROCHIP TECHNOLOGY TN0104-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005930A.pdf TN0104N3-G-P003 THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TN0104N3-G-P003 TN0104N3-G-P003 Hersteller : Microchip Technology TN0104-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005930A.pdf Description: MOSFET N-CH 40V 450MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH