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TN0106N3-G-P003

TN0106N3-G-P003 Microchip Technology


TN0106_N_Channel_Enhancement_Mode_Vertical_DMOS_FE-3442214.pdf Hersteller: Microchip Technology
MOSFETs N-Channel DMOS FET Low Threshold 2.0V
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Lieferzeit 10-14 Tag (e)
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2+1.83 EUR
25+1.55 EUR
100+1.41 EUR
Mindestbestellmenge: 2
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Technische Details TN0106N3-G-P003 Microchip Technology

Description: MOSFET N-CH 60V 350MA TO92-3, Packaging: Tape & Reel (TR), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA (Tj), Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2V @ 500µA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V.

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TN0106N3-G-P003 TN0106N3-G-P003 Hersteller : Microchip Technology TN0106-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005932A.pdf Description: MOSFET N-CH 60V 350MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 318 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
25+1.55 EUR
100+1.41 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
TN0106N3-G-P003 TN0106N3-G-P003 Hersteller : Microchip Technology tn010620c080813.pdf Trans MOSFET N-CH 60V 0.35A 3-Pin TO-92 T/R
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TN0106N3-G-P003 Hersteller : MICROCHIP TECHNOLOGY TN0106-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005932A.pdf TN0106N3-G-P003 THT N channel transistors
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Im Einkaufswagen  Stück im Wert von  UAH
TN0106N3-G-P003 TN0106N3-G-P003 Hersteller : Microchip Technology TN0106-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005932A.pdf Description: MOSFET N-CH 60V 350MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH