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TN0106N3-G

TN0106N3-G MICROCHIP TECHNOLOGY

tn0106.pdf Hersteller: MICROCHIP TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 2A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.35A
Pulsed drain current: 2A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 299 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
48+1.52 EUR
54+ 1.34 EUR
65+ 1.12 EUR
68+ 1.06 EUR
100+ 1.02 EUR
Mindestbestellmenge: 48
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Technische Details TN0106N3-G MICROCHIP TECHNOLOGY

Description: MOSFET N-CH 60V 350MA TO92-3, Packaging: Bag, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 350mA (Tj), Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2V @ 500µA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V.

Weitere Produktangebote TN0106N3-G nach Preis ab 1.02 EUR bis 1.74 EUR

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TN0106N3-G TN0106N3-G Hersteller : MICROCHIP TECHNOLOGY tn0106.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 350mA; Idm: 2A; 1W; TO92
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.35A
Pulsed drain current: 2A
Power dissipation: 1W
Case: TO92
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: THT
Kind of package: bulk
Kind of channel: enhanced
auf Bestellung 299 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
48+1.52 EUR
54+ 1.34 EUR
65+ 1.12 EUR
68+ 1.06 EUR
100+ 1.02 EUR
Mindestbestellmenge: 48
TN0106N3-G TN0106N3-G Hersteller : Microchip Technology TN0106-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005932A.pdf Description: MOSFET N-CH 60V 350MA TO92-3
Packaging: Bag
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 500µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 1071 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.71 EUR
25+ 1.43 EUR
100+ 1.29 EUR
Mindestbestellmenge: 11
TN0106N3-G TN0106N3-G Hersteller : Microchip Technology TN0106_N_Channel_Enhancement_Mode_Vertical_DMOS_FE-1901920.pdf MOSFET 60V 3Ohm
auf Bestellung 4817 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.74 EUR
25+ 1.46 EUR
100+ 1.31 EUR
Mindestbestellmenge: 2