TN0110N3-G Microchip Technology

Description: MOSFET N-CH 100V 350MA TO92-3, Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-92-3, Vgs(th) (Max) @ Id: 2V @ 500µA, Power Dissipation (Max): 1W (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 350mA (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Packaging: Bag.