TN0604N3-G-P013 Microchip Technology
auf Bestellung 524 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 3.25 EUR |
| 17+ | 3.22 EUR |
| 25+ | 2.94 EUR |
| 100+ | 2.76 EUR |
| 4000+ | 2.73 EUR |
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Technische Details TN0604N3-G-P013 Microchip Technology
Description: MOSFET N-CH 40V 700MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 700mA (Tj), Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V, Power Dissipation (Max): 740mW (Ta), Vgs(th) (Max) @ Id: 1.6V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V.
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| TN0604N3-G-P013 | Hersteller : MICROCHIP TECHNOLOGY |
 TN0604N3-G-P013 THT N channel transistors |
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,TO-226_straightlead.jpg "TN0604N3-G-P013") |
TN0604N3-G-P013 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 40V 700MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Tj) Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V |
Produkt ist nicht verfügbar |