TN0604N3-G-P013 Microchip Technology
| Anzahl | Privatkunde |
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| 2+ | 2.75 EUR |
| 1000+ | 2.05 EUR |
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Technische Details TN0604N3-G-P013 Microchip Technology
Description: MOSFET N-CH 40V 700MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 700mA (Tj), Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V, Power Dissipation (Max): 740mW (Ta), Vgs(th) (Max) @ Id: 1.6V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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TN0604N3-G-P013 | Microchip Technology |
 Description: MOSFET N-CH 40V 700MA TO92-3Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Tj) Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V Power Dissipation (Max): 740mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TN0604N3-G-P013 | Microchip Technology |
TN0604N3-G-P013 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| TN0604N3-G-P013 |
|
Hersteller: Microchip Technology
Description: MOSFET N-CH 40V 700MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
Description: MOSFET N-CH 40V 700MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.5A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| TN0604N3-G-P013 |
|
Hersteller: Microchip Technology
TN0604N3-G-P013
TN0604N3-G-P013
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH