TN0610N3-G-P013 Microchip Technology
auf Bestellung 1789 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 3.33 EUR |
| 100+ | 2.78 EUR |
| 500+ | 2.54 EUR |
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Technische Details TN0610N3-G-P013 Microchip Technology
Description: MOSFET N-CH 100V 500MA TO92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 500mA (Tj), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V, Power Dissipation (Max): 1W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-92-3, Drive Voltage (Max Rds On, Min Rds On): 3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V.
Weitere Produktangebote TN0610N3-G-P013
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| TN0610N3-G-P013 | Hersteller : MICROCHIP TECHNOLOGY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 500mA; Idm: 3.2A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.5A Pulsed drain current: 3.2A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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TN0610N3-G-P013 | Hersteller : Microchip Technology |
Description: MOSFET N-CH 100V 500MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Tj) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V |
Produkt ist nicht verfügbar |
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| TN0610N3-G-P013 | Hersteller : MICROCHIP TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 500mA; Idm: 3.2A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.5A Pulsed drain current: 3.2A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced |
Produkt ist nicht verfügbar |