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TN2106K1-G

TN2106K1-G Microchip Technology

TN2106_N_Channel_Enhancement_Mode_Vertical_DMOS_FE-1919873.pdf Hersteller: Microchip Technology
MOSFET 60V 2.5Ohm
auf Bestellung 417 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
34+1.55 EUR
40+ 1.31 EUR
100+ 1.19 EUR
Mindestbestellmenge: 34
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Technische Details TN2106K1-G Microchip Technology

Description: MOSFET N-CH 60V 280MA TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 280mA (Tj), Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V, Power Dissipation (Max): 360mW (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TO-236AB (SOT23), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V.

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TN2106K1-G Hersteller : Microchip TN2106-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005942A.pdf N-Channel 60V 280mA (Tj) 360mW (Tc) Surface Mount TO-236AB (SOT23) TN2106K1-G Microchip TTN2106K1-G
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
10+2.98 EUR
Mindestbestellmenge: 10
TN2106K1-G TN2106K1-G Hersteller : MICROCHIP TECHNOLOGY tn2106.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 360mW; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 0.6A
Power dissipation: 0.36W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
TN2106K1-G TN2106K1-G Hersteller : Microchip Technology TN2106-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005942A.pdf Description: MOSFET N-CH 60V 280MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
TN2106K1-G TN2106K1-G Hersteller : Microchip Technology TN2106-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005942A.pdf Description: MOSFET N-CH 60V 280MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
TN2106K1-G TN2106K1-G Hersteller : MICROCHIP TECHNOLOGY tn2106.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 360mW; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 0.6A
Power dissipation: 0.36W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar