TN2130K1-G Microchip Technology
Hersteller: Microchip TechnologyDescription: MOSFET N-CH 300V 85MA TO236AB
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 4.5V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 300 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 3347 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 0.74 EUR |
| 30+ | 0.6 EUR |
| 100+ | 0.57 EUR |
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Technische Details TN2130K1-G Microchip Technology
Description: MOSFET N-CH 300V 85MA TO236AB, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 85mA (Tj), Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 4.5V, Power Dissipation (Max): 360mW (Tc), Vgs(th) (Max) @ Id: 2.4V @ 1mA, Supplier Device Package: TO-236AB (SOT23), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 300 V, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V.
Weitere Produktangebote TN2130K1-G nach Preis ab 0.85 EUR bis 1.11 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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TN2130K1-G | Hersteller : Microchip Technology |
MOSFET 300V 25Ohm |
auf Bestellung 38437 Stücke: Lieferzeit 14-28 Tag (e) |
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TN2130K1-G | Hersteller : MICROCHIP |
Description: MICROCHIP - TN2130K1-G - Leistungs-MOSFET, n-Kanal, 300 V, 85 mA, 25 ohm, TO-236AB, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 300 Dauer-Drainstrom Id: 85 Qualifikation: - MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 360 Gate-Source-Schwellenspannung, max.: 2.4 Verlustleistung: 360 Bauform - Transistor: TO-236AB Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 25 Rds(on)-Prüfspannung: 4.5 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 25 SVHC: No SVHC (10-Jun-2022) |
auf Bestellung 592 Stücke: Lieferzeit 14-21 Tag (e) |
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TN2130K1-G | Hersteller : MICROCHIP |
Description: MICROCHIP - TN2130K1-G - Leistungs-MOSFET, n-Kanal, 300 V, 85 mA, 25 ohm, TO-236AB, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 360 Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 25 rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 592 Stücke: Lieferzeit 14-21 Tag (e) |
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| TN2130K1-G | Hersteller : Supertex |
Transistor N-Channel MOSFET; 300V; 20V; 25Ohm; 85mA; 360mW; -55°C ~ 150°C; TN2130K1-G TTN2130k1 Anzahl je Verpackung: 25 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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TN2130K1-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 0.25A; 360mW; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Pulsed drain current: 0.25A Power dissipation: 0.36W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 25Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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TN2130K1-G | Hersteller : Microchip Technology |
Description: MOSFET N-CH 300V 85MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85mA (Tj) Rds On (Max) @ Id, Vgs: 25Ohm @ 120mA, 4.5V Power Dissipation (Max): 360mW (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-236AB (SOT23) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 300 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V |
Produkt ist nicht verfügbar |
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TN2130K1-G | Hersteller : MICROCHIP TECHNOLOGY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 0.25A; 360mW; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Pulsed drain current: 0.25A Power dissipation: 0.36W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 25Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |